| PART |
Description |
Maker |
| 4MBI300VG-120R-50 |
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
|
Fuji Electric
|
| IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| MII400-12E4 |
1200V IGBT module
|
IXYS
|
| MII200-12A4 |
1200V IGBT module
|
IXYS
|
| IGW25T120 |
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 25A 1200V TO247 IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 6MBI10S-120L |
IGBT MODULE(1200V 6x10A)
|
Fuji Electric
|
| 6MBI25LB-120 |
IGBT(1200V 25A) 25 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A |
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管（带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB
5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
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